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DN2540N3-G

型号(PratNumber)
DN2540N3-G
数量(QTY.)
300
厂家(Brand)
MICROCHIP
封装(Package)
TO-92
批号(DC.)
16+
联系人(contact)
销售一部:邓先生,李先生,销售二部:邓小姐,廖先生,销售三部:张小姐,伍先生
电话(contact)
0755-83266061/83266062/83368855/83266082
PDF(PDF.)
询价(Inquire)
1.产品简介

The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and positive temperature coefficient inherent in MOS device. Characteristic of all MOS structure, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speed are desired.

  • Low ON-resistance

  • Free from secondary breakdown

  • Low input and output leakage

  • 应用

    电源管理, 通信与网络


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